China takes a decisive step towards technological independence in the semiconductor sector. In response to the restrictions imposed by the United States on access to the most advanced silicon -based technologies, a research group led by Professor Peng Hoilin ofUniversity of Beijing He announced the creation of a high -performance chip that. According to scientists, this innovation represents a real paradigm change:
If innovations with existing materials are shortcuts, our 2D transistor is a change of lane.
A 2D transistor in Bismuto instead of silicon
The new transistor developed by the Chinese team is based on an alternative material: the bismuto. This metal made it possible to create two new compounds, the Bi₂o₂se and the Bi₂seo₅who play the role of respectively semiconductor material and of Dielectric high oxide. Thanks to these materials, the researchers managed to build extremely thin gridswithout dispersion and capable of significantly lowering the switching voltage.
This solution could allow China to definitively overcome the addiction to silicon and, consequently, on foreign technologies, in particular American ones. The project is the result of almost Ten years of research conducted within the University of Beijing, from which the discovery of the Bi₂se/Bi₂seo₅ materials also emerged.
Gaafet architecture challenges the giants of the sector
There new architecture of the transistor leaves the traditional Finfet model in favor of a configuration Gaafet (Gate-all-ring fet). This structure eliminates the fins present in conventional transistors, allowing a Best current management It is a greater density of integration, essential to overcome the technological limit of the 3 nanometers.
According to Chinese scientists, the bismuto transistor surpasses the performance of the 3 Nm chips made by the giants in the sector such as Intel, TSMC, Samsung and the Belgian Interuniversity Center of Microelectronics. In addition, the new device turns out to be the 40% more powerful Compared to its most advanced competitors, with a lower energy consumption of 10%. An efficiency that could increase further with the improvement of the production process.
